Samsung 990 EVO Plus 2TB M.2 NVMe SSD - PCIe 4.0 x4/5.0 x2 7250 MB/s (Boxed)
Samsung 990 EVO Plus 2TB NVMe SSD with PCIe 4.0 x4/5.0 x2 interface, delivering up to 7,250 MB/s read and 6,300 MB/s write speeds. Features enhanced power efficiency (73% improvement), M.2 2280 form factor, and 5-year warranty.
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Discontinued
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| Storage (SSD & HDD) - Device Type | Internal SSD |
|---|---|
| Storage (SSD & HDD) - Capacity | 2TB |
| Storage (SSD & HDD) - Sequential Read Speed (SSD) | 7001 to 10000 MB s |
| Storage (SSD & HDD) - Interface | PCIe 4.0 (Gen4) PCIe 5.0 (Gen5) |
| Storage (SSD & HDD) - DRAM Cache (SSD) | None (DRAM-less) |
| Storage (SSD & HDD) - Heatsink (SSD) | Included |
| Storage (SSD & HDD) - Form Factor | M.2 2280 |
| Storage (SSD & HDD) - PCIe Lanes (SSD) | x2 x4 |
The Samsung 990 EVO Plus 2TB is a high-performance NVMe SSD designed for client PCs and laptops, offering significant speed improvements over its predecessor. With sequential read speeds up to 7,250 MB/s and write speeds up to 6,300 MB/s, this drive delivers 45% faster performance while maintaining exceptional power efficiency with a 73% improvement in MB/s per watt. The drive features Samsung's latest 8th Generation V-NAND technology with a 5nm proprietary controller and supports both PCIe 4.0 x4 and PCIe 5.0 x2 interfaces for maximum compatibility.
Built in the compact M.2 2280 form factor, the 990 EVO Plus integrates a nickel-coated controller and heat spreader for optimal thermal management. It utilizes a DRAM-less architecture with Host Memory Buffer (HMB) support and Intelligent TurboWrite 2.0 technology for sustained write performance. The drive is rated for 1,200 TBW (Total Bytes Written) endurance and comes with a comprehensive 5-year limited warranty, making it an excellent choice for users requiring reliable, fast storage for large file transfers, content creation, and everyday computing tasks.
- Sequential Performance: 7,250 MB/s read / 6,300 MB/s write
- Random Performance: 1,000,000 IOPS read / 1,350,000 IOPS write
- Interface: PCIe 4.0 x4 / PCIe 5.0 x2 NVMe 2.0
- Form Factor: M.2 2280 single-sided PCB
- Capacity: 2TB (1,920GB usable)
- Endurance: 1,200 TBW
- Warranty: 5-year limited warranty
- Encryption: AES 256-bit, TCG/Opal v2.0
| Capacity | 2TB (2,000GB) |
| Form Factor | M.2 2280 |
| Interface | PCIe 4.0 x4 / PCIe 5.0 x2 NVMe 2.0 |
| Sequential Read Speed | Up to 7,250 MB/s |
| Sequential Write Speed | Up to 6,300 MB/s |
| Random Read (4KB, QD32) | Up to 1,000,000 IOPS |
| Random Write (4KB, QD32) | Up to 1,350,000 IOPS |
| Controller | Samsung Piccolo 5nm Proprietary Controller |
| NAND Flash | Samsung V8 TLC (Triple-Level Cell), 236-layer |
| Cache | Host Memory Buffer (HMB), DRAM-less |
| Dimensions (Drive) | 80.15 x 22.15 x 2.38 mm |
| Weight (Drive) | 9.0g |
| Active Power (Read) | 4.6W |
| Active Power (Write) | 4.2W |
| Device Sleep Power (L1.2) | Typical 60mW / 5mW |
| Endurance (TBW) | 1,200 TBW |
| Warranty | 5-year Limited Warranty or 1,200 TBW |
| Encryption | AES 256-bit, TCG/Opal v2.0, MS eDrive (IEEE1667) |
| Application | Client PCs |
| Heatsink | Nickel-coated controller with heat spreader label |
| Performance Improvement | 45% faster than previous 990 EVO model |
| Power Efficiency Improvement | 73% enhanced MB/s per watt |
Brochure Samsung MZ-V9S2T0BW (pd
Brochure Samsung MZ-V9S2T0BW (pd