Samsung 990 EVO Plus 4TB M.2 2280 NVMe SSD - PCIe 4.0x4 7250/6300 MB/s MZ-V9S4T0BW (Retail)
4TB Samsung 990 EVO Plus M.2 2280 NVMe SSD—PCIe 4.0 x4/5.0 x2, up to 7,250/6,300 MB/s read/write. Nickel-coated controller, Intelligent TurboWrite 2.0, HMB cache, Samsung Magician support.
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| Storage (SSD & HDD) - Device Type | Internal SSD |
|---|---|
| Storage (SSD & HDD) - Capacity | 4TB |
| Storage (SSD & HDD) - Interface | PCIe 4.0 (Gen4) |
| Storage (SSD & HDD) - DRAM Cache (SSD) | None (DRAM-less) |
| Storage (SSD & HDD) - Heatsink (SSD) | Not Included |
| Storage (SSD & HDD) - Form Factor | M.2 2280 |
| Storage (SSD & HDD) - PCIe Lanes (SSD) | x4 |
The Samsung 990 EVO Plus MZ-V9S4T0BW is a high-performance 4TB M.2 2280 NVMe SSD designed for gamers, creators, and professionals. It delivers sequential read speeds up to 7,250 MB/s and write speeds up to 6,300 MB/s, powered by PCIe 4.0 x4 (or PCIe 5.0 x2) interface and NVMe 2.0 protocol. Featuring Samsung's in-house 5nm controller with nickel coating for superior thermal efficiency and power consumption (73% better than predecessor), this DRAM-less drive uses Host Memory Buffer (HMB) for optimized caching.
Built with 236-layer V-NAND TLC flash, it supports Intelligent TurboWrite 2.0 with enlarged cache for sustained large-file performance. Security features include AES 256-bit encryption (Class 0), TCG/Opal v2.0, and IEEE 1667. Endurance rated at 2,400 TBW with 1.5 million hours MTBF and 5-year warranty. Compatible with Samsung Magician software for monitoring, optimization, and firmware updates.
- Form Factor: M.2 2280
- Capacity: 4TB
- Random R/W (QD32): 1,050K/1,400K IOPS
- Power (Active): 5.5W Read / 4.8W Write
- Dimensions (bare): 80.15 x 22.15 x 2.38 mm
| Capacity | 4TB |
| Interface | PCIe 4.0 x4 / PCIe 5.0 x2, NVMe 2.0 |
| Form Factor | M.2 2280 |
| Sequential Read | Up to 7,250 MB/s |
| Sequential Write | Up to 6,300 MB/s |
| Random Read (QD32) | 1,050K IOPS |
| Random Write (QD32) | 1,400K IOPS |
| NAND Flash | Samsung V-NAND TLC (236-layer) |
| Controller | Samsung in-house (5nm, nickel-coated) |
| DRAM Cache | None (HMB) |
| Encryption | AES 256-bit (Class 0), TCG/Opal v2.0, IEEE 1667 |
| TBW | 2,400 TBW |
| Power Consumption (Active) | 5.5W / 4.8W (Read/Write) |
| Dimensions | 80.15 x 22.15 x 2.38 mm |
| MTBF | 1.5 Million Hours |
| Warranty | 5 Years |
Brochure Samsung MZ-V9S4T0BW (pd
Brochure Samsung MZ-V9S4T0BW (pd