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SAMSUNG

Samsung PM9D3a 3.84TB 2.5" PCIe 5.0 NVMe SSD (Bulk)

SKU 90766 Brand SAMSUNG EAN13 4262543010847
Samsung PM9D3a 3.84TB enterprise-grade NVMe SSD with PCIe 5.0 x4 interface, delivering 12,000 MB/s sequential read and 6,000 MB/s write speeds. Ideal for data centers and high-performance server environments.
Storage (SSD & HDD) - Device Type Internal SSD
Storage (SSD & HDD) - Capacity 4TB
Storage (SSD & HDD) - Sequential Read Speed (SSD) Above 10000 MB s
Storage (SSD & HDD) - Interface PCIe 5.0 (Gen5)
Storage (SSD & HDD) - DRAM Cache (SSD) Yes
Storage (SSD & HDD) - Form Factor 2.5 inch
Storage (SSD & HDD) - PCIe Lanes (SSD) x4

The Samsung PM9D3a 3.84TB is a high-performance enterprise-grade NVMe SSD designed for modern data centers, AI workloads, and server environments. Featuring the advanced PCIe 5.0 x4 interface and NVMe 2.0 protocol, this 2.5-inch form factor drive delivers exceptional sequential read speeds of up to 12,000 MB/s and write speeds of 6,000 MB/s, making it one of the fastest drives in its class.

Built on Samsung's eighth-generation three-bit V-NAND technology, the PM9D3a offers outstanding random I/O performance with up to 2,000K IOPS random read and 250K IOPS random write operations. The drive features 45% improved power efficiency compared to previous generations, with active power consumption as low as 13W for reads and 16W for writes, plus just 4.3W in idle mode. Advanced data protection technologies including End-to-End Data Protection, power-loss protection architecture, and S.M.A.R.T. monitoring ensure data integrity in mission-critical environments.

With an MTBF rating of 2,500,000 hours and latency specifications of 65µs for random reads and 9µs for random writes, the PM9D3a excels in handling high-throughput, low-latency operations typical of enterprise server and cloud infrastructures. The compact 2.5-inch form factor allows for dense storage configurations without compromising thermal performance.

  • Interface: PCIe 5.0 x4 NVMe 2.0
  • Capacity: 3.84TB
  • Sequential Performance: 12,000 MB/s read / 6,000 MB/s write
  • Random I/O: 2,000K IOPS read / 250K IOPS write
  • Power Consumption: 13W read / 16W write / 4.3W idle
  • MTBF: 2,500,000 hours
  • Form Factor: 2.5-inch
  • Enterprise-grade reliability and data protection
Capacity3.84 TB
Form Factor2.5-inch
InterfacePCIe 5.0 x4
ProtocolNVMe 2.0
Sequential Read Speed12,000 MB/s
Sequential Write Speed6,000 MB/s
Random Read (4KB)2,000K IOPS
Random Write (4KB)250K IOPS
NAND TechnologySamsung eighth-generation three-bit V-NAND (TLC)
MTBF2,500,000 hours
Active Read Power13W
Active Write Power16W
Idle Power4.3W
Random Read Latency65 µs
Random Write Latency9 µs
Data ProtectionEnd-to-End Data Protection, Power-Loss Protection, S.M.A.R.T. monitoring
EncryptionHardware-based AES-XTS 256-bit
Component ForEnterprise Server / Data Center
PackagingBulk