Samsung 9100 PRO 8TB M.2 NVMe SSD PCIe 5.0 14800/13400 MB/s (Boxed)
Samsung 9100 PRO MZ-VAP8T0B 8TB M.2 2280 NVMe PCIe 5.0 SSD. Up to 14,800 MB/s read, 13,400 MB/s write, 2.2M/2.6M IOPS. For PC/gaming. V-NAND TLC, 5yr warranty.
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Discontinued
This item was discontinued and currently is not available for order on our website. The item may become available soon. Please contact us if you need more information regarding the upcoming arrivals.
| Storage (SSD & HDD) - Device Type | Internal SSD |
|---|---|
| Storage (SSD & HDD) - Capacity | 8TB |
| Storage (SSD & HDD) - Sequential Read Speed (SSD) | Above 10000 MB s |
| Storage (SSD & HDD) - Interface | PCIe 5.0 (Gen5) |
| Storage (SSD & HDD) - Heatsink (SSD) | Not Included |
| Storage (SSD & HDD) - Form Factor | M.2 2280 |
| Storage (SSD & HDD) - PCIe Lanes (SSD) | x4 |
The Samsung 9100 PRO 8TB NVMe M.2 SSD (MZ-VAP8T0B/AM) delivers breakthrough PCIe 5.0 performance with sequential read speeds up to 14,800 MB/s and write speeds up to 13,400 MB/s. Random performance reaches 2,200K read / 2,600K write IOPS, ideal for gaming, content creation, and AI workloads. Built with advanced V-NAND TLC technology and NVMe 2.0 protocol over PCIe 5.0 x4 interface.
This M.2 2280 form factor drive offers massive 8TB capacity in a compact 80.15 x 22.15 x 3.88 mm size, weighing just 9.5g. It features innovative power and thermal control for up to 49% better efficiency, TRIM support, 256-bit AES security, and a robust 1,500,000 hours MTBF. Backed by 5-year warranty or 4,800 TBW endurance.
- Key Specs: PCIe 5.0 x4 | NVMe 2.0 | 14,800/13,400 MB/s seq. | 2.2M/2.6M IOPS rand.
- Compatibility: Client PCs, gaming consoles
- Power: 10.5W read, 8.8W write, 0.009W idle
- Durability: 0-70°C, 1500G shock
- Warranty: 5 years limited
| Manufacturer Part Number | MZ-VAP8T0B/AM |
| NVMe Version | 2.0 |
| SSD Storage Capacity | 8 TB |
| SSD Form Factor | M.2 |
| Interface | PCI Express 5.0 x4 |
| Memory Type | V-NAND TLC |
| Component for | PC/Game Consoles |
| M.2 SSD Size | 2280 |
| Sequential Read Speed | Up to 14,800 MB/s |
| Sequential Write Speed | Up to 13,400 MB/s |
| Random Read (4KB) | Up to 2,200,000 IOPS |
| Random Write (4KB) | Up to 2,600,000 IOPS |
| Supported Security Algorithms | 256-bit AES |
| Feature | TRIM support |
| Mean Time Between Failures (MTBF) | 1,500,000 hours |
| Operating Voltage | 3.3 V |
| Power Consumption (read) | 10.5 W |
| Power Consumption (write) | 8.8 W |
| Power Consumption (idle) | 0.009 W |
| Operating Temperature | 0 - 70 °C |
| Shock Resistance | 1500 G |
| Warranty Period | 5 Years or 4,800 TBW |
| Dimensions (WxHxD) | 80.15 x 22.15 x 3.88 mm (bare) |
| Weight | Max 9.5 g (bare) |
| DRAM Cache | Yes |